Soft x-ray photoemission studies of the HfO2/SiO2/Si system
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چکیده
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منابع مشابه
Soft x-ray photoemission studies of the HfO2 ÕSiO2 ÕSi system
Soft x-ray photoelectron spectroscopy with synchrotron radiation was employed to study the valence-band offsets for the HfO2 /SiO2 /Si and HfO2 /SiOxNy /Si systems. We obtained a valence-band offset difference of 21.0560.1 eV between HfO2 ~in HfO2/15 Å SiO2 /Si! and SiO2 ~in 15 Å SiO2 /Si!. There is no measurable difference between the HfO2 valence-band maximum positions of the HfO2/10 Å SiOxNy...
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